Analytical Modeling of StackedAluminium Nitride Nanosheet FETs (AlNNFETs) for Cryogenic Applications

Abstract

The present investigation proposes a new 2D analytical model for the Stacked Aluminum Nitride (AlN) Nanosheet Field Effect Transistor (AlNNFETs). For the first time, the 2D Poisson equation has been determined using the Linear Approximation Method (LAM) with appropriate boundary conditions. The precise analytical formulas for the variables drain current, transconductance, electric field, and channel potential are obtained in order to evaluate the device's performance. Regardless of the large electron fluxes into the channel brought on by the Nanosheet channel's interaction with the gate, the device functions at cryogenic temperatures. With a huge drive current capacity, it provides a significant scaling of the device. The Stacked Nanosheet's perpendicular layered structure enables it to achieve a low threshold voltage and hightransconductance. A good degree of consistency is found when comparing the findings of analytical models and TCAD simulation software.