Performance Analysis of Heterojunction Double Gate – TFET for Low Power

Abstract

The possibility that Heterojunction Double Gate Tunnelling Field-Effect Transistors (H- DGTFETs) can solve the scaling problems that traditional MOSFETs experience has made them a hot topic recently. We offer a thorough evaluation of H-DGTFET performance characteristics and suggest ways to improve their operational efficiency in this work. We study the important elements impacting device performance and look for ways to improve them using a mix of simulation research, device modelling, and experimental validation. Starting with an overview of HDGTFET structure and basic concepts, the examination go on to highlight their distinctive properties, such as heterojunction interfaces and dual gate architecture. We then establish a set of performance criteria to evaluate the suggested improvements, which includes ON/OFF current ratio, subthreshold swing, transconductance, cutoff frequency, and energy efficiency. Results show that tunnelling barrier thickness, gate leakage, interface states, and manufacturing variability are some of the limiting parameters influencing H-DGTFET performance. We provide optimisation techniques for materials, gates, interfaces, and device geometries as means to overcome these obstacles. We assess the effect of different approaches on device performance and find the best parameter settings using state-of-the-art simulation tools. As part of the experimental validation process, prototype devices that include the suggested improvements are manufactured. By comparing these devices to baseline designs, we can see that they significantly enhance performance indicators, proving that our tactics are effective. The performance of enhanced H-DGTFETs is evaluated in comparison to that of state-of-the-art transistors, including FinFETs and traditional MOSFETs. The results show that HDGTFETs are the best option for low-power logic circuits and memory devices due to their speed, scalability, and superior power consumption. Contributing to the development of semiconductor technology, this study sheds light on the optimisation methodologies and performance characteristics of HDGTFETs. These results open the door to the creation of transistors that can handle the ever-increasing demands of future electronics.