Modelling and Simulation of HS-IMPATT Devices based on Graphene/SiC for D-band Applications

Abstract

A numerical simulation of a Hetero-structure  based Graphene/4H-SiC and Homo-structure based Graphene, 4H-SiC double-drift region (DDR) impact ionization avalanche transit time (IMPATT) diodes operating at 140Gz is presented in this paper. By using drift-diffusion model   the authors investigated the DC, small-signal properties of IMPATT diodes. The comprehensive simulation results show that, in comparison to its other counterparts, the Graphene/4H-SiC DDR IMPATT performs better in terms of efficiency and output power. With an ideal bias current density of 6.51×10⁸A/m², the Graphene/4H-SiC DDR IMPATT diode yields a conversion efficiency of 18.4% and and an output power of 38.73W, respectively, demonstrating its superiority over other IMPATTs. The design findings in this work are highly promising and useful in the realization of these diodes for millimeter-wave communication systems